The MA4AGSW3 is an Aluminum-Gallium-Arsenide,
single pole, triple throw (SP3T), PIN diode switch.
The switch features enhanced AlGaAs anodes which
are formed using MACOM’s patented heterojunction
technology. This technology produces a
switch with less loss than conventional GaAs processes.
As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode
air-bridges during handling and assembly. Off chip
bias circuitry is required.
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly components.