MACOM's MA4E1310 is a gallium arsenide flip
chip Schottky barrier diode. This diode is fabricated
on a OMCVD epitaxial wafer using a process
designed for high device uniformity and extremely
low parasitics. This device is fully passivated
with silicon nitride and has an additional
layer of polyimide for scratch protection. The
protective coatings prevent damage to the junction
during automated or manual handling. The
flip chip configuration is suitable for pick and
place insertion.
The high cutoff frequency of this diode allows
use through millimeter wave frequencies. Typical
applications include single and double balanced
mixers in PCN transceivers and radios,
police radar detectors, automotive radar detectors,
etc. This device can be used through 110
GHz.