MA4E1310

GaAs Flip Chip Single

MACOM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of this diode allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, automotive radar detectors, etc. This device can be used through 110 GHz.

Product Specifications

Part Number
MA4E1310
Short Description
GaAs Flip Chip Schottky Barrier Diode
Vf(V)
0.7000
Vb
7.00
Total Capacitance(pF)
0.040
Dynamic Resistance(ohms)
7.0
Junction Capacitance(pF)
0.010
Package Category
Surface Mount Die
Package
ODS-1278

Features

  • Low Series Resistance
  • Polyimide Scratch Protection
  • Silicon Nitride Passivation
  • High Cutoff Frequency
  • Low Capacitance
  • Designed for Easy Circuit Insertion

Applications

  • ISM

Order from MACOM

MA4E1310
GAAS_FLIP_CHIP
MA4E1310 Distributors