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Low Barrier
The MA4E2054L-1261 diode is a low barrier, n-type,
silicon Schottky device. It is useful as a high
performance mixer or detector diode at frequencies
from VHF through X-band. These chips can be
used in automatic assembly processes due to their
0.004” gold bond pads and sturdy construction.
Features
- Low IR (<100nA @ 1V, <500nA @ 3V)
- RoHS* Compliant
- Low 1/F Noise
- Low Capacitance: 0.14 pF (typ.)
- High Detector Sensitivity: -55 dBm TSS
- Low Noise Figure: 5.7 dB (SSB) at X-Band
- Designed for High Volume, Low Cost Detector and Mixer Applications
Applications
- Aerospace and Defense
- ISM
Specifications
- Tss: -50 dBm
- Min Frequency: 0 MHz
- Junction Capacitance: 0.15 pF
- Total Capacitance: 0.15 pF
- Vf: 0.25 V
- Test Frequency: 2 GHz
- Vb: 3
- Dynamic Resistance: 17 ohms
- Max Frequency: 10,000 MHz
Datasheet
Package
- ODS-1261
Package Category
- Die/Bumped Die
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