Product Detail

Low Barrier
The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes due to their 0.004” gold bond pads and sturdy construction.
  • Low IR (<100nA @ 1V, <500nA @ 3V)
  • RoHS* Compliant
  • Low 1/F Noise
  • Low Capacitance: 0.14 pF (typ.)
  • High Detector Sensitivity: -55 dBm TSS
  • Low Noise Figure: 5.7 dB (SSB) at X-Band
  • Designed for High Volume, Low Cost Detector and Mixer Applications
  • Aerospace and Defense
  • ISM
  • Tss: -50 dBm
  • Min Frequency: 0 MHz
  • Junction Capacitance: 0.15 pF
  • Total Capacitance: 0.15 pF
  • Vf: 0.25 V
  • Test Frequency: 2 GHz
  • Vb: 3 
  • Dynamic Resistance: 17 ohms
  • Max Frequency: 10,000 MHz
  • ODS-1261
Package Category
  • Die/Bumped Die
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
ODS-1261 Inquire Buy Buy

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