MA4E2054L-1261
Low Barrier
The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes due to their 0.004” gold bond pads and sturdy construction.
Product Specifications
- Part Number
- MA4E2054L-1261
- Description
- Low Barrier
- Vf(V)
- 0.3000
- Vb
- 3.00
- Total Capacitance(pF)
- 0.150
- Dynamic Resistance(ohms)
- 17.0
- Junction Capacitance(pF)
- 0.150
- Package Category
- Die/Bumped Die
- Package
- ODS-1261
Features
- Low IR (<100nA @ 1V, <500nA @ 3V)
- RoHS* Compliant
- Low 1/F Noise
- Low Capacitance: 0.14 pF (typ.)
- High Detector Sensitivity: -55 dBm TSS
- Low Noise Figure: 5.7 dB (SSB) at X-Band
- Designed for High Volume, Low Cost Detector and Mixer Applications
Applications
- Aerospace and Defense
- ISM
Technical Resources
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Principles, Applications and Selection of Receiving Diodes