The MA4E2501L-1290 SURMOUNT Diodes are Silicon
Low Barrier Schottky Devices fabricated with the patented
Heterolithic Microwave Integrated Circuit (HMIC™)
process. HMIC™ circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass dielectric,
which acts as the low dispersion, microstrip transmission
medium. The combination of silicon and glass allows
HMIC™ devices to have excellent loss and power dissipation
characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead device
coupled with the superior mechanical performance of
a chip. The SURMOUNT structure employs very low
resistance silicon vias to connect the Schottky contacts to
the metalized mounting pads on the bottom surface of the
chip. These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
The multi-layer metalization employed in the fabrication
of the Surmount Schottky junctions includes a platinum
diffusion barrier, which permits all devices to be subjected
to a 16-hour non-operating stabilization bake at
300°C.
The extremely small “ 0201 ” outline allows for Surface
Mount placement and multi-functional polarity orientations.
The MA4E2501L-1290 SURMOUNT Low Barrier
Schottky diode is recommended for use in microwave
circuits through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers, detectors
and limiters.