MA4GP907
GaAs PIN Diode
MACOM's MA4GP907 is a Gallium Arsenide (GaAs) flip-chip PIN diode. It is fabricated using an OMCVD epitaxial wafer and a process optimized for high device uniformity and extremely low parasitics. The diode exhibits an extremely low RC product, (0.1ps) and 2-3nS switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly. The ultra low capacitance of the MA4GP907 allows for operation up to millimeter frequencies for RF switches and switched phase shifter applications. The diode is designed for use in pulsed or CW applications, where single digit nS switching speed is required. The low capacitance of the MA4GP907 makes it for use in microwave multi-throw switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR.
Product Specifications
- Part Number
- MA4GP907
- Description
- GaAs PIN Diode
- Breakdown Voltage, Minimum(V)
- 45
- Resistance(Ohm)
- 4.20
- Total Capacitance(pF)
- 0.030
- CW Power Dissipation(W)
- 0.3
- Package
- Flip Chip DIE
- Package Category
- Surface Mount Die
- ROHS
- Yes
- Min Frequency(MHz)
- 100
- Max Frequency(MHz)
- 30000
Features
- Low Series Resistance
- Polyimide Scratch Protection
- Silicon Nitride Passivation
- Can be Driven by a Buffered TTL
- 2 Nanosecond Switching Speed
- Millimeter Wave Switching & Cutoff Frequency
- Ultra Low Capacitance
- RoHS Compliant
Applications
- Aerospace and Defense
- ISM
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Bonding, Handling, and Mounting Procedures for Chip Diode Devices
- Design with PIN Diodes
- Establishing the Minimum Reverse Bias for a PIN Diode in a High-Power Switch
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches