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Power
The MAAM26100-P1 is a GaAs MMIC two stage
high efficiency power amplifier in a lead-free high
performance bolt down ceramic package. The
MAAM26100-P1 is a fully monolithic design which
eliminates the need for external circuitry in 50-ohm
systems.
The MAAM26100-P1 is ideally suited for driver
amplifiers and transmitter outputs in UMTS
applications, test equipment, electronic warfare
jammers, missile subsystems and phased array
radars.
The MAAM26100-P1 is fabricated using a mature
0.5-micron gate length GaAs process. The process
features full passivation for increased
performance reliability.
Features
- Saturated Output Power: 30.5 dBm Typical
- 260°C Reflow Compatible
- RoHS* Compliant
- High Performance Ceramic Package
- Lead-Free
- DC Decoupled RF Input and Output
- On-Chip Bias Network
- Power Added Efficiency: 30% Typical
- 20 dB Typical
Applications
- Aerospace and Defense
- ISM
Specifications
- Bias Voltage: 8 V
- Gain: 20 dB
- Output P1dB: 28 dBm
- PAE: 30 %
- Psat: 30.5 dBm
- OIP3: 40 dBm
- Bias Current: 475
- Min Frequency: 2,000 MHz
- Max Frequency: 6,000 MHz
Datasheet
Application Notes
- AN3009 - S-Parameter S2P File Format Guide
- M513 - Tape and Reel Packaging for Surface Mount Components
- M538 - Surfacing Mounting Instructions - Footprint Guidelines
- M567 - CR-15 Package Handling and Mounting Procedure
- AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
Package
- CR15
Package Category
- Ceramic Surface Mount
Marking
- MAAM26100-P1
Lead Finish
- Lead frame, base plate and external metallization: gold plate .000050 to .000225 thick per MIL-G-45204, type III, grade A. over electrolytic nickel plate .000075 to .000225 thick per QQ-N-290.
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