MAAP-011170
Power Amplifier, 37.0 - 40.0 GHz
The MAAP-011170 is a four stage 37-40 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 27 dB with a +38 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 7x7mm Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications.
Product Specifications
- Part Number
- MAAP-011170
- Description
- Power Amplifier, 37.0 - 40.0 GHz
- Min Frequency(MHz)
- 37000
- Max Frequency(MHz)
- 40000
- Gain(dB)
- 27.0
- Output P1dB(dBm)
- 27.00
- PSAT(dBm)
- 28
- OIP3(dBm)
- 38.0
- Package
- Lead-Free 7 mm 16-lead SMD Package
- Package Category
- Surface Mount
- Rohs
- Yes
Features
- Linear Power Amplifier
- 27.0 dB Small Signal Gain
- Output Power Adjust
- On-Chip Power Detector
- +38.0 dBm OIP3
- +27.0 dBm P1dB Compression Point
- RoHS* Compliant and 260°C Reflow Compatible
- Lead-Free 7 mm 16-lead SMD Package
Applications
- Point-to-Point Microwave Radio applications
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- Surface Mounting Instructions for PQFN Packages
- Tape and Reel Packaging for Surface Mount Components