MAAP-011422-DIE
10W, GaN Power Amplifier
MAAP-011422-DIE is a 10 W high-performance GaN Power Amplifier MMIC designed to operate from 6 to 18 GHz and is offered in bare die form. It is fully matched across the frequency band. The MAAP-011422-DIE has 41 dBm of output power and 33% PAE and can be used an a power amplifier stage. This device is ideally suited to satellite communication and radar applications. The MAAL-011422-DIE is manufactured using a high performance 100 nm gate length GaN on Si HEMT power technology (D01GH). The MMIC uses gold bonding pads and backside metallization and is fully protected with silicon nitride passivation to obtain the highest level of reliability.
Product Specifications
- Part Number
- MAAP-011422-DIE
- Description
- 10W, GaN Power Amplifier
- Min Frequency(MHz)
- 6000
- Max Frequency(MHz)
- 18000
- Gain(dB)
- 20.0
- PSAT(dBm)
- 40
- Bias Current(mA)
- 600
- Package
- Lead-Free
- Package Category
- Die
- Rohs
- Yes
Features
- Gain: 20 dB
- Output Power:41.5 dBm @12 GHz
- PAE: 33%
- Power Supply: 12 V, 3.5 A @12 GHz
- Input & Output Matched: 50 Ω
- Die Size: 4160 x 3100 x 100 µm
- RoHS* Compliant
Applications
- SATCOM
- Radar