MAAP-015024-DIE

Power Amplifier, 8W

 The MAAP-015024-DIE three stage 14.5 - 17.5 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 39 dBm and a small signal gain of 20 dB. The power amplifier must be biased directly on both sides of the die. This MMIC uses MACOM’s GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation for protection and backside via holes and gold metallization to allow a conductive epoxy die attach process. This device is well suited for communication and radar applications. 

Product Specifications

Part Number
MAAP-015024-DIE
Short Description
Power Amplifier, 8 W 14.5 - 17.5 GHz
Min Frequency(MHz)
14500
Max Frequency(MHz)
17500
Gain(dB)
21.0
Package
DIE
Package Category
Die
ROHS
Yes

Features

  • 8 W Power Amplifier
  • Bare Die
  • 100% Visual Inspection to MIL-STD-833
  • 100% On-wafer DC & RF Power Tested
  • Dual Sided Bias Architecture
  • 39 dBm Saturated Pulsed Output Power
  • 20 dB Small Signal Gain

Applications

  • Aerospace and Defense

Order from MACOM

MAAP-015024-DIER
Amplifier,Ku Band,10W,Grip Ring,MMIC