Product Detail

MAAP-015024-DIE
Power Amplifier, 8W

 The MAAP-015024-DIE three stage 14.5 - 17.5 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 39 dBm and a small signal gain of 20 dB. The power amplifier must be biased directly on both sides of the die. This MMIC uses MACOM’s GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation for protection and backside via holes and gold metallization to allow a conductive epoxy die attach process. This device is well suited for communication and radar applications. 

Features
  • 8 W Power Amplifier
  • Bare Die
  • 100% Visual Inspection to MIL-STD-833
  • 100% On-wafer DC & RF Power Tested
  • Dual Sided Bias Architecture
  • 39 dBm Saturated Pulsed Output Power
  • 20 dB Small Signal Gain
Applications
  • Aerospace and Defense
Specifications
  • Min Frequency: 14,500 MHz
  • Max Frequency: 17,500 MHz
  • Gain: 21 dB
  • OIP3: 27 dBm
  • Bias Current: 5 mA
Package
  • DIE
Package Category
  • Die/Bumped Die
ROHS
  • Yes
Part Number Package MACOM Richardson RFPD DigiKey Mouser Rell
MAAP-015024-DIER
Amplifier, Ku Band, 10W, Grip Ring, MMIC
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