Product Detail

MAAP-015035-DIE
Power Amplifier, 12 W

 The MAAP-015035-DIE is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications. 

Features
  • 36 dB Small Signal Gain
  • 100% On-wafer DC & RF Power Tested
  • On Chip Gate Bias Circuit
  • 40% Power Added Efficiency
  • 41 dBm Saturated Pulsed Output Power
  • 100% Visual Inspection to MIL-STD-833
Applications
  • Aerospace and Defense
Specifications
  • Min Frequency: 8,500 MHz
  • Max Frequency: 11,500 MHz
  • Output P1dB: 40 dBm
  • Psat: 41 dBm
  • Gain: 36 dB
  • Bias Voltage: 8 V
Package
  • DIE
Package Category
  • Bare Die
ROHS
  • Yes
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MAAP-015035-DIE
AMPLIFIER, X-BAND, 12WATT, 3 STAGE, DIE
DIE Inquire Buy Buy
MAAP-015035-DIEEV1
SAMPLE BRD, MAAP-015035-DIE, DIRECT GATE
DIE Inquire
MAAP-015035-DIEEV2
Amp, Pwr, Sample, 8.5-11.75GHz, 10W, Bias Cct
DIE Inquire

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