MAAP-015035-DIE

Power Amplifier, 12 W

 The MAAP-015035-DIE is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications. 

Product Specifications

Part Number
MAAP-015035-DIE
Description
Power Amplifier, 12 W
Min Frequency(MHz)
8500
Max Frequency(MHz)
11500
Gain(dB)
36.0
PSAT(dBm)
41
Bias Current
3000
Package
DIE
Package Category
Die
Rohs
Yes

Features

  • 36 dB Small Signal Gain
  • 100% On-wafer DC & RF Power Tested
  • On Chip Gate Bias Circuit
  • 40% Power Added Efficiency
  • 41 dBm Saturated Pulsed Output Power
  • 100% Visual Inspection to MIL-STD-833

Applications

  • Aerospace and Defense

Order from MACOM

MAAP-015035-DIE
AMPLIFIER, X-BAND, 12WATT, 3 STAGE, DIE
MAAP-015035-DIE Distributors
MAAP-015035-DIEEV1
SAMPLE BRD, MAAP-015035-DIE, DIRECT GATE
MAAP-015035-DIEEV2
Amp,Pwr,Sample,8.5-11.75GHz,10W,Bias Cct