MAAP-G0100D
GaN High Power Amplifier, 10 W 2 - 20 GHz
The MAAP-G0100D is a 10 W, MMIC HPA utilizing MACOM’s high performance, 0.15 µm GaN-on-SiC production process. This amplifier operates from 2 - 20 GHz and can support a variety of applications such as electronic warfare, radar, test and measurement, among others. Under saturation, the MAAP-G0100D achieves 10 W of typical output power with 18 dB of large signal gain and 24% power-added efficiency. The bare die solution provides peak performance while minimizing required board space.
Product Specifications
- Part Number
- MAAP-G0100D
- Description
- GaN High Power Amplifier, 10 W 2 - 20 GHz
- Min Frequency(MHz)
- 2000
- Max Frequency(MHz)
- 20000
- Gain(dB)
- 20.0
- Bias Current(mA)
- 500
- Package
- Bare Die
- PAE(%)
- 24.00
Features
- Saturated Power: 10 W
- Power Added Efficiency: 24%
- Large Signal Gain: 18 dB
- Small Signal Gain: 22 dB
- Input Return Loss: <-10 dB
- Output Return Loss: <-10 dB
- CW operation
- Small Footprint
Applications
- Electronic Warfare
- Test and measurement
- Radar
- General Amplification