MAAP-G0100D

GaN High Power Amplifier, 10 W 2 - 20 GHz

The MAAP-G0100D is a 10 W, MMIC HPA utilizing MACOM’s high performance, 0.15 µm GaN-on-SiC  production process. This amplifier operates from  2 - 20 GHz and can support a variety of applications  such as electronic warfare, radar, test and  measurement, among others. Under saturation, the MAAP-G0100D achieves 10 W of typical output  power with 18 dB of large signal gain and 24%  power-added efficiency. The bare die solution provides peak performance while minimizing required board space.  

Product Specifications

Part Number
MAAP-G0100D
Description
GaN High Power Amplifier, 10 W 2 - 20 GHz
Min Frequency(MHz)
2000
Max Frequency(MHz)
20000
Gain(dB)
20.0
Bias Current(mA)
500
Package
Bare Die
PAE(%)
24.00

Features

  • Saturated Power: 10 W
  • Power Added Efficiency: 24%
  • Large Signal Gain: 18 dB
  • Small Signal Gain: 22 dB
  • Input Return Loss: <-10 dB
  • Output Return Loss: <-10 dB
  • CW operation
  • Small Footprint

Applications

  • Electronic Warfare
  • Test and measurement
  • Radar
  • General Amplification

Technical Resources

Datasheet


Order from MACOM

MAAP-G0100D
Power Amplifier, 2-20 GHz, 10W, Die