This device is a Silicon-Glass PIN diode chip
fabricated with MACOM's patented
HMICTM process. This device features two
silicon pedestals embedded in a low loss, low dispersion
glass. The diode is formed on the top of one
pedestal and connections to the backside of the device
are facilitated by making the pedestal sidewalls
electrically conductive. Selective backside
metallization is applied producing a surface mount
device. This vertical conic topology provides for
exceptional heat transfer from the active area. The
topside is fully encapsulated with silicon nitride and
has an additional polymer layer for scratch and
impact protection. These protective coatings prevent
damage to the junction and the anode air-bridge
during handling and assembly.
These surmount devices are suitable for usage in
moderate incident power (5W C.W.) or higher
incident peak power (50W) series, shunt, or
series-shunt switches. Lower parasitic inductance,
0.45nH, and excellent RC constant (0.23pS), make
the devices ideal for higher frequency switch
elements compared to their plastic device
counterparts.