MACOM's MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide
(AlGaAs) flip-chip PIN diodes. These devices are
fabricated on OMCVD epitaxial wafers using a process
optimized for high device uniformity and exceptionally
low parasitics. The end result is a diode with an
extremely low RC product, (0.1ps) and 2-3nS
switching characteristics. They are fully passivated
with silicon nitride and have an added polymer layer
for scratch protection. The protective coating prevents
damage to the junction and the anode air-bridge
during handling and assembly.
The ultra low capacitance of the MA4AGP907 and
MA4AGFCP910 make them ideal for RF switch and
phase shifter applications through millimeter wave
frequencies. The diodes are designed for use in
pulsed or CW applications, where single digit nS
switching speed is required. The low capacitance of
these diodes make them ideal for use in microwave
multi-throw switch assemblies, where the series
capacitance of each “off” port adversely loads the input
and affects VSWR.