MADP-011104

High Power Shunt PIN Diode, 50 MHz - 5 GHz

  The MADP-011104 is a high-power PIN diode assembled in a lead-free 3 mm 12-lead QFN plastic package. This shunt device provides exceptional switch or attenuator performance from 50 MHz to 5 GHz.

This compact device is ideally suited to switch and attenuator applications from HF through S band, where higher peak and CW power, lower loss, and higher linearity surface-mount diode assemblies are required.

Product Specifications

Part Number
MADP-011104
Description
High Power Shunt PIN Diode, 50 MHz - 5 GHz
Breakdown Voltage, Minimum(V)
800
Resistance(Ohm)
2.21
Total Capacitance(pF)
0.450
Lifetime(ns)
2000
CW Power Dissipation(W)
8.0
Thermal Resistance(°C/W)
45.0
Package
3x3 QFN
Package Category
QFN
ROHS
Yes
Min Frequency(MHz)
50
Max Frequency(MHz)
5000

Features

  • 350 W CW Incident Power Handling @ 3 GHz
  • 0.15 dB Insertion Loss @ 3 GHz
  • 29 dB Isolation @ 3 GHz
  • Lead-Free 3 mm 12-lead QFN Package
  • Halogen-Free “Green” Mold Compound
  • RoHS* Compliant

Technical Resources

Datasheet

Application Notes


Order from MACOM

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