Product Detail

This device is a silicon glass PIN diode chip fabricated with MACOM‘s patented HMIC™ process. This 80µm I-region length device features six silicon pedestals embedded in a low loss, low dispersion glass. The diodes are formed on the top of a pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. The vertical silicon diode topology provides for a highly efficient heat transfer medium. These surface mount devices are suitable for usage in higher (3W avg.) incident power switches. Small parasitic inductance and excellent RC constant make these devices ideal for absorptive SPST, reflective SP2T switches, and attenuator circuits, where higher P1db and power handling values are required.