MADS-001318-1197HP

GaAs Flip Chip Anti-Parallel

These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.The protective coatings prevent damage to the junction during automated or manual handling.The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeterwave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz.

Product Specifications

Part Number
MADS-001318-1197HP
Description
GaAs Flip Chip Anti-Parallel
Vf(V)
0.8000
Vb
7.00
Total Capacitance(pF)
0.090
Dynamic Resistance(ohms)
4.0
Package Category
Surface Mount
Package
ODS-1197

Features

  • Low Series Resistance
  • High Cutoff Frequency
  • Silicon Nitride Passivation
  • Polymide Scratch Protection
  • Designed for Easy Circuit Insertion
  • Low Capacitance

Applications

  • ISM

Technical Resources

Datasheet


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