The MADZ-011001 is a terahertz cutoff frequency, gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.
The high cutoff frequency of this diode allows use through W band and higher frequencies. Typical applications include single and double balanced mixers in radar transceivers, communications transceivers, test and measurement equipment, etc.
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Diode, Schottky, GaAs, TeraHertz