Product Detail

Schottky Diode W Band

The MADZ-011001 is a terahertz cutoff frequency, gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.

The high cutoff frequency of this diode allows use through W band and higher frequencies. Typical applications include single and double balanced mixers in radar transceivers, communications transceivers, test and measurement equipment, etc.

Features
  • High Cutoff Frequency: 1.27 THz Typical
  • Low Series Resistance
  • Low Capacitance
  • Silicon Nitride Passivation
  • Polyimide Scratch Protection
  • Designed for Easy Circuit Insertion
Applications
  • Radar
  • Test and measurement
  • Communications
Specifications
  • Cutoff Frequency: 1.27 THz
  • Total Capacitance: 40 fF
  • Resistance: 3.4 Ω
Datasheet
Package
  • DIE
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MADZ-011001-1278G0
Diode, Schottky, GaAs, TeraHertz
ODS-1278 Inquire Buy

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