Product Detail

THz Schottky Barrier Diode W Band

 MADZ-011002 Single junction, MADZ-011003 anti-parallel pair, MADZ-011004 reverse tee and MADZ-011005 unconnected anti-parallel pair are gallium arsenide flip chip THz Schottky barrier diodes.

These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.

The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.

The high cutoff frequencies of these diodes allow use through G and W band frequencies. Typical applications include single and double balanced mixers in radio transceivers and automotive radars. 

Features
  • Low Series Resistance
  • Low Capacitance
  • High Cutoff Frequency
  • Silicon Nitride Passivation
  • Polyimide Scratch Protection
  • Designed for Easy Circuit Insertion
Applications
  • Radar
  • Test and measurement
  • Communications
Specifications
  • Cutoff Frequency: 1 THz
  • Total Capacitance: 49 fF
  • Resistance: 3.5 Ω
Package
  • DIE
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MADZ-011002-1278G0
Diode, Schottky, GaAs, TeraHertz
ODS-1278 Inquire

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