THz Schottky Barrier Diode W Band
MADZ-011003, anti-parallel pair, is a gallium arsenide flip chip THz Schottky barrier diode.
The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diode is fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.
The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.
The high cutoff frequencies of the diode allows use through G and W band frequencies. Typical applications include single and double balanced mixers in radio transceivers and automotive radars.
The MADZ-011003 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input.
- Part Number
- THz Schottky Barrier Diode W Band
- Cutoff Frequency(THz)
- Total Capacitance(fF)
- Anti parallel
- Low Series Resistance
- Low Capacitance
- High Cutoff Frequency
- Silicon Nitride Passivation
- Polyimide Scratch Protection
- Designed for Easy Circuit Insertion
- Test and measurement