Product Detail

THz Schottky Barrier Diode W Band

 The MADZ-011004, reverse tee, is a gallium arsenide flip chip THz Schottky barrier diode.

The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diode is fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.

The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.

The high cutoff frequencies of the diode allows use through G and W band frequencies. Typical applications include single and double balanced mixers in radio transceivers and automotive radars. 

Features
  • Low Series Resistance
  • Low Capacitance
  • High Cutoff Frequency
  • Silicon Nitride Passivation
  • Polyimide Scratch Protection
  • Designed for Easy Circuit Insertion
Applications
  • Radar
  • Test and measurement
  • Communications
Specifications
  • Cutoff Frequency: 1 THz
  • Total Capacitance: 49 fF
  • Resistance: 3.5 Ω
Package
  • DIE
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MADZ-011004-1199G0
Diode, Schottky, GaAs, TeraHertz
ODS-1199 Inquire

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