MADZ-011005

THz Schottky Barrier Diode W Band

MADZ-011005,unconnected anti-parallel pair, is a gallium arsenide flip chip THz Schottky barrier diodes.

The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diode is fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.

The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.

The high cutoff frequencies of the diode allows use through G and W band frequencies. Typical applications include single and double balanced mixers in radio transceivers and automotive radars. 

The MADZ-011005 unconnected pair may be used in temperature-compensated detector circuits, as well as receiver protector limiter circuits and more.

Product Specifications

Part Number
MADZ-011005
Cutoff Frequency(THz)
1.00
Total Capacitance(fF)
49
Resistance(Ω)
3.5
Configuration
Unconnected anti-parallel pair
Package
DIE

Features

  • Low Series Resistance
  • Low Capacitance
  • High Cutoff Frequency
  • Silicon Nitride Passivation
  • Polyimide Scratch Protection
  • Designed for Easy Circuit Insertion

Applications

  • Radar
  • Test and measurement
  • Communications

Technical Resources

Datasheet


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MADZ-011005-1262G0
Diode,Schottky,GaAs,TeraHertz
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