MAGB-102327-010B0P

GaN Amplifier 50 V, 10 W, 2.3 - 2.7GHz, n40 & n41

The MAGB-102327-010B0P is a wideband GaN HEMT D-mode amplifier designed for base station applications and optimized for 2.3 - 2.7 GHz modulated signal operation. This device supports pulsed and linear operation with peak output levels to 8 W (39 dBm) in a 4x4mm DFN package.

Product Specifications

Part Number
MAGB-102327-010B0P
Short Description
GaN Amplifier 50 V, 10 W, 2.3 - 2.7GHz, n40 & n41
Min Frequency(MHz)
2300
Max Frequency(MHz)
2700
Supply Voltage(V)
50
PSAT(W)
8.0
Gain(dB)
17.2
Efficiency
72.2
Test Freq(GHz)
2.50
Package
4x4 mm

Features

  • Suitable for Linear and Saturated Applications
  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • High Terminal Impedances for Broadband Performance
  • 48 V Operation
  • 100 % RF Tested
  • RoHS* Compliant

Applications

  • cellular Basestation

Technical Resources

Datasheet


Order from MACOM

MAGB-102327-010B0P
Amplifier, 10W 2.3-2.7GHz, GaN, QFN
MAGB-102327-010B0P Distributors