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GaN Amplifier 50 V, 10 W, 2.3 - 2.7GHz, n40 & n41
The MAGB-102327-010B0P is a wideband GaN HEMT D-mode amplifier designed for base station applications and optimized for 2.3 - 2.7 GHz modulated signal operation. This device supports pulsed and linear operation with peak output levels to 8 W (39 dBm) in a 4x4mm DFN package.
Features
- Suitable for Linear and Saturated Applications
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 48 V Operation
- 100 % RF Tested
- RoHS* Compliant
Applications
- cellular Basestation
Specifications
- Min Frequency: 2,300 MHz
- Max Frequency: 2,700 MHz
- Supply Voltage: 50 V
- PSAT: 8 W
- Gain: 17.2 dB
- Test Freq: 2.5 GHz
Datasheet
Package
- 4x4 mm
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