MAGB-102327-010B0P
GaN Amplifier 50 V, 10 W, 2.3 - 2.7GHz, n40 & n41
The MAGB-102327-010B0P is a wideband GaN HEMT D-mode amplifier designed for base station applications and optimized for 2.3 - 2.7 GHz modulated signal operation. This device supports pulsed and linear operation with peak output levels to 8 W (39 dBm) in a 4x4mm DFN package.
Product Specifications
- Part Number
- MAGB-102327-010B0P
- Description
- GaN Amplifier 50 V, 10 W, 2.3 - 2.7GHz, n40 & n41
- Min Frequency(MHz)
- 2300
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 8.0
- Gain(dB)
- 17.2
- Efficiency
- 72.2
- Test Freq(GHz)
- 2.50
- Package
- 4x4 mm
- PSAT(dBm)
- 39
Features
- Suitable for Linear and Saturated Applications
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 48 V Operation
- 100 % RF Tested
- RoHS* Compliant
Applications
- cellular Basestation