Product Detail

GaN Amplifier 48 V, 50 W 3.3 - 3.8 GHz

 The MAGB-103338-050S0P is a pair of wideband GaN HEMT D-mode amplifier designed for base station applications and optimized for 3.3 - 3.8 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 50 W (47 dBm) in a 7 x 6.5 mm DFN package. 

Features
  • Suitable for Linear and Saturated Applications
  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • High Terminal Impedances for Broadband Performance
  • 48 V Operation
  • 100 % RF Tested
  • RoHS* Compliant
Applications
  • Linear and Saturated Applications
Specifications
  • Min Frequency: 3,300 MHz
  • Max Frequency: 3,800 MHz
  • Supply Voltage: 48 V
  • PSAT: 50 W
  • Gain: 16.3 dB
  • Test Freq: 3.6 GHz
Package
  • 7.0 x 6.5 mm DFN
Package Category
  • DFN Plastic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MAGB-103338-050S0P
Amplifier, 50W 3.3-4.0GHz, GaN-Si, DFN
6.5X7MM PDFN-6LD Inquire
MAGB-103338-050STP
Amplifier, 50W, 3.3-4.0GHz, GaN-Si, T&R
6.5X7MM PDFN-6LD Inquire
MAGB-1B3338-050S0P
Sample Board, MAGB-103338-050S0P
6.5X7MM PDFN-6LD Inquire

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