Product Detail

MAGB-104450-015B0P
GaN Amplifier 50 V, 15 W 4.4 - 5.0 GHz

The MAGB-104450-015B0P is a wideband GaN on Si HEMT D-mode transistor designed for cellular base station applications and optimized for 4.4 - 5.0 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 15W (41.8 dBm) in a 6x3mm DFN package.

Features
  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant
Applications
  • Cellular Base Station Applications
Specifications
  • Min Frequency: 4,400 MHz
  • Max Frequency: 5,000 MHz
  • Supply Voltage: 50 V
  • PSAT: 15 W
  • Gain: 16 dB
Application Notes
Package
  • 6 x 3 mm DFN
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MAGB-104450-015B0P
GaN Transistor, 4.4-5.0GHz, 15W
3x6mm PDFN-14LD Inquire
MAGB-104450-015BTP
GaN Transistor, 4.4-5.0GHz, 15W, T&R
3x6mm PDFN-14LD Inquire

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