MAGB-104450-015B0P

GaN Amplifier 50 V, 15 W 4.4 - 5.0 GHz

The MAGB-104450-015B0P is a wideband GaN on Si HEMT D-mode transistor designed for cellular base station applications and optimized for 4.4 - 5.0 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 15W (41.8 dBm) in a 6x3mm DFN package.

Product Specifications

Part Number
MAGB-104450-015B0P
Short Description
GaN Amplifier 50 V, 15 W 4.4 - 5.0 GHz
Min Frequency(MHz)
4400
Max Frequency(MHz)
5000
Supply Voltage(V)
50
PSAT(W)
15.0
Gain(dB)
16.0
Efficiency
51
Package
6 x 3 mm DFN

Features

  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Applications

  • Cellular Base Station Applications

Technical Resources

Datasheet

Application Notes


Order from MACOM

MAGB-104450-015B0P
GaN Transistor, 4.4-5.0GHz, 15W
MAGB-104450-015BTP
GaN Transistor, 4.4-5.0GHz, 15W, T&R