GaN Amplifier 50 V, 100 W, DC - 2.7 GHz
The MAGX-100027-100C0P is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 100 W (50.0 dBm) in a plastic package. The MAGX-100027-100C0P is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
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- GaN Amplifier 50 V, 100 W, DC - 2.7 GHz
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