MAGX-100027-100C0P

GaN Amplifier 50 V, 100 W, DC - 2.7 GHz

 The MAGX-100027-100C0P is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 100 W (50.0 dBm) in a plastic package. The MAGX-100027-100C0P is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.  

Product Specifications

Part Number
MAGX-100027-100C0P
Short Description
GaN Amplifier 50 V, 100 W, DC - 2.7 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
2700
Supply Voltage(V)
50
PSAT(W)
100.0
Gain(dB)
15.1
Efficiency
59
Test Freq(GHz)
2.50
Package
TO-272S-2

Features

  • Suitable for Linear and Saturated Applications
  • CW and Pulsed Operation: 100 W Output Power
  • Internally Pre-Matched
  • 260°C Reflow Compatible
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Applications

  • Avionics
  • Military Radio
  • Radar
  • RF Energy
  • Test and measurement

Technical Resources

Datasheet

Application Notes


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MAGX-100027-100C0P
Transistor,GaN,100W,CW
MAGX-100027-100C0P Distributors