MAGX-100027-300C0P
GaN Amplifier 50 V, 300 W, DC - 2.7 GHz
The MAGX-100027-300C0P is high power GaN on Si HEMT device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 300 W (54.8 dBm) in a plastic package. The MAGX-100027-300C0P is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
Product Specifications
- Part Number
- MAGX-100027-300C0P
- Description
- GaN Amplifier 50 V, 300 W, DC - 2.7 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 300.0
- Gain(dB)
- 16.3
- Test Freq(GHz)
- 2.00
- Package
- TO-272S-4I
- PSAT(dBm)
- 55
Features
- Suitable for Linear and Saturated Applications
- Pair of Isolated, Symmetric Amplifiers
- CW and Pulsed Operation: 300 W Output Power
- Internally Pre-Matched
- 260°C Reflow Compatible
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant