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High Power Switch with Integrated Bias Control
The MAMF-011070 is a high power broadband PIN diode SPDT switch with a 5 V power management chip designed for 0.7 - 6 GHz TDD-LTE applications. The device features low insertion loss, high isolation with low DC power consumption. It has an integrated bias controller utilizing a boost circuit. This switch requires only a single 5 V supply, and a single TX / RX control signal that is compatible with 1.8 V or 3.3 V logic.
Applications
- TD-LTE Basestations
Specifications
- Min Frequency: 0.3 GHz
- Max Frequency: 6 GHz
- Low Insertion Loss (Transmit): 0.3 dB
- IIP3: 68 dBm
- Receive Isolation: 43 dB
- CW Incident Power : 125 W
- Input P0.1dB: 50.5 dBm
- Low Insertion Loss (Receive): 0.4 dB
Datasheet
Model Data (Sparameters)
Package
- 5 mm 20-lead HQFN
| Part Number | Package | MACOM | Richardson RFPD | DigiKey | Mouser | Richardson Electronics |
|---|---|---|---|---|---|---|
|
MAMF-011070
High Power Switch w/Boost Drv, HQNF
|
5mm HQFN-20LD | Inquire | ||||
|
MAMF-011070-001SMB
Diode, Switch (w/Boost Driver), SMB
|
5mm HQFN-20LD | Inquire | ||||
|
MAMF-011070-TR1000
High Power Switch w/Boost Drv, HQNF
|
5mm HQFN-20LD | Inquire | ||||
|
MAMF-011070-TR3000
High Power Switch w/Boost Drv, HQNF
|
5mm HQFN-20LD | Inquire | ||||
|
PT-0018630
SOC052, Cap Die 32pF20%100V, MAMF-011070
|
WAFER | Inquire | ||||
|
PT-0018631
Si PIN, Die, BPP413, m2213, MAMF-011070
|
WAFER | Inquire | ||||
|
PT-0018633
Si PIN, Die, BPP122, m2215, MAMF-011070
|
WAFER | Inquire |
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