MAMF-011070
High Power Switch with Integrated Bias Control
The MAMF-011070 is a high power broadband PIN diode SPDT switch with a 5 V power management chip designed for 0.7 - 6 GHz TDD-LTE applications. The device features low insertion loss, high isolation with low DC power consumption. It has an integrated bias controller utilizing a boost circuit. This switch requires only a single 5 V supply, and a single TX / RX control signal that is compatible with 1.8 V or 3.3 V logic.
Product Specifications
- Part Number
- MAMF-011070
- Description
- High Power Switch with Integrated Bias Control
- Min Frequency(GHz)
- 0.03
- Max Frequency(GHz)
- 6.00
- Transmit Input P0.1dB CW(dBm)
- 50.50
- Transmit Insertion Loss(dB)
- 0.30
- Receive Insertion Loss(dB)
- 0.40
- Receive Isolation(dB)
- 43.00
- Package
- 5 mm 20-lead HQFN
Applications
- 5G Communications