The MAPC-A1000 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for .3 - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 25 W (44 dBm) in a plastic package.
The MAPC-A1000 is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
|Part Number||Package||MACOM||Richardson RFPD||DigiKey||Mouser||Richardson Electronics|
GaN Amplifier 50 V, 25 W
|7.0 x 6.5 mm DFN||Inquire|