MAPC-A1006-AD

GaN Amplifier 12.5 W, 28 V 20 – 1000 MHz

The MAPC-A1006 is a GaN on Silicon Carbide HEMT amplifier suitable for 20 - 1000 MHz frequency operation. The device supports both CW and pulsed operation with minimum output power levels of 12.5 W (41 dBm) in a 5 x 6 mm plastic package.

Product Specifications

Part Number
MAPC-A1006-AD
Description
GaN Amplifier 12.5 W, 28 V 20 – 1000 MHz
Min Frequency(MHz)
20
Max Frequency(MHz)
1000
Supply Voltage(V)
12
PSAT Watt(W)
28.0
Gain(dB)
13.1
Efficiency
58.5

Features

  • MACOM PURE CARBIDE® Amplifier Series
  • Suitable for Linear & Saturated Applications
  • CW & Pulsed Operation
  • 50 Ω Input Matched
  • 260°C Reflow Compatible
  • 28 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Applications

  • Military Radio Communications
  • Radar
  • Avionics
  • Digital cellular infrastructure
  • RF Energy
  • Test and Instrumentation

Technical Resources

Datasheet


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