MAPC-A1006-AD
GaN Amplifier 12.5 W, 28 V 20 – 1000 MHz
The MAPC-A1006 is a GaN on Silicon Carbide HEMT amplifier suitable for 20 - 1000 MHz frequency operation. The device supports both CW and pulsed operation with minimum output power levels of 12.5 W (41 dBm) in a 5 x 6 mm plastic package.
Product Specifications
- Part Number
- MAPC-A1006-AD
- Description
- GaN Amplifier 12.5 W, 28 V 20 – 1000 MHz
- Min Frequency(MHz)
- 20
- Max Frequency(MHz)
- 1000
- Supply Voltage(V)
- 12
- PSAT Watt(W)
- 28.0
- Gain(dB)
- 13.1
- Efficiency
- 58.5
Features
- MACOM PURE CARBIDE® Amplifier Series
- Suitable for Linear & Saturated Applications
- CW & Pulsed Operation
- 50 Ω Input Matched
- 260°C Reflow Compatible
- 28 V Operation
- 100% RF Tested
- RoHS* Compliant
Applications
- Military Radio Communications
- Radar
- Avionics
- Digital cellular infrastructure
- RF Energy
- Test and Instrumentation