MAPC-A1100
GaN Amplifier 50 V, 65 W, DC - 3.5 GHz - MACOM PURE CARBIDE
The MAPC-A1100 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 3.5 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 65 W (48.1 dBm) in an air cavity ceramic package.
The MAPC-A1100 is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
Product Specifications
- Part Number
- MAPC-A1100
- Description
- GaN Amplifier 50 V, 65 W, DC - 3.5 GHz - MACOM PURE CARBIDE
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 3500
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 65.0
- Gain(dB)
- 18.0
- Efficiency
- 71
- Test Freq(GHz)
- 3.50
- Package
- AC-360S-2
- Package Category
- Ceramic
- Design Resource
- MDLX-MACOM-GaN-Library-Web-Graphic_21.09.07.jpg
- PSAT(dBm)
- 48
Features
- MACOM PURE CARBIDE™ Amplifier Series
- Suitable for Linear and Saturated Applications
- CW and Pulsed Operation: 65 W Output Power
- Internally Pre-Matched
- 260°C Reflow Compatible
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant
Technical Resources
Datasheet
Application Notes
Additional Resources
Technology Partners
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