Product Detail

GaN Amplifier 50 V, 65 W

The MAPC-A1100 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 3.5 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 65 W (48.1 dBm) in an air cavity ceramic package.

The MAPC-A1100 is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.

  • Part of the PURE CARBIDE™ Amplifier series
  • Suitable for Linear and Saturated Applications
  • CW and Pulsed Operation: 65 W Output Power
  • Internally Pre-Matched
  • 260°C Reflow Compatible
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant
  • Avionics
  • Military Radio
  • Radar
  • RF Energy
  • Test and Instrumentation
  • Digital cellular infrastructure
  • Supply Voltage: 50 V
  • PSAT: 65 W
  • Gain: 18 dB
  • Test Freq: 3,500 GHz
  • Min Frequency: 0 MHz
  • Max Frequency: 3,500 MHz
  • Theta J-C: 3.7 C/W
  • AC-360S-2
Package Category
  • Ceramic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
GaN Amplifier 50 V, 65 W
AC-360S-2 Inquire

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