The MAPC-A1100 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 3.5 GHz frequency operation. The device supports both CW and pulsed operation with output power levels of at least 65 W (48.1 dBm) in an air cavity ceramic package.
The MAPC-A1100 is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
|Part Number||Package||MACOM||Richardson RFPD||DigiKey||Mouser||Richardson Electronics|
GaN Amplifier 50 V, 65 W