MAPC-A1109
GaN Amplifier 28 V, 8 W 1.8 - 2.7 GHz
The MAPC-A1109 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for applications 1 W average power and optimized for 1.8 - 2.7 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 8 W (39 dBm) in an 4 mm surface mount QFN package.
Product Specifications
- Part Number
- MAPC-A1109
- Description
- GaN Amplifier 28 V, 8 W 1.8 - 2.7 GHz
- Min Frequency(MHz)
- 1800
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 8.0
- Gain(dB)
- 16.8
- Efficiency
- 40
Features
- MACOM PURE CARBIDE® Amplifier Series
- Optimized for 1.8 to 2.7 GHz Applications
- High Terminal Impedances for Broadband Performance
- 20 V to 28 V Operation
- Low thermal resistance
- 100% RF Tested
- RoHS* Compliant
Applications
- Aerospace and Defense