MAPC-A1111-AP
GaN Amplifier 50 V, 100 W DC - 2.7 GHz
The MAPC-A1111-AP is high power GaN on SiC device optimized for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels of 100 W (50.0 dBm) in a plastic package. The MAPC-A1111-AP is ideally suited for a multitude of applications including military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
Product Specifications
- Part Number
- MAPC-A1111-AP
- Description
- GaN Amplifier 50 V, 100 W DC - 2.7 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 100.0
- Gain(dB)
- 16.5
- Efficiency
- 68.4
Features
- Suitable for Linear and Saturated Applications
- CW and Pulsed Operation: 100 W Output Power
- Internally Pre-Matched
- 260°C Reflow Compatible
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant