MAPC-A2001

GaN Amplifier 50 V, 50 W 3.4 - 4.0 GHz

The MAPC-A2001 is a higher power GaN on Silicon Carbide HEMT D-mode amplifier designed for 5G base station applications and optimized for 3.4 - 4.0 GHz modulated signal operation. The device supports pulsed and linear operation with peak output power levels to 50W (47 dBm) in a 7.0 x 6.5mm DFN package.

Product Specifications

Part Number
MAPC-A2001
Description
GaN Amplifier 50 V, 50 W 3.4 - 4.0 GHz
Min Frequency(MHz)
3400
Max Frequency(MHz)
4000
Supply Voltage(V)
50
PSAT Watt(W)
50.0
Gain(dB)
17.0
Efficiency
62
Test Freq(GHz)
3.60
Package
7.0 x 6.5 mm DFN
Package Category
DFN
PSAT(dBm)
47

Features

  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • Compatible with MACOM Power Management Bias Controller/Sequencer MABC-11040
  • 100 % RF Tested
  • RoHS* Compliant

Technical Resources

Datasheet

Application Notes


Order from MACOM

MAPC-A2001-AD000
Amplifier,3.4-4.0 GHz,GaN-SiC,DFN 7x6.5
MAPC-A2001-ADSB1
Sample Board, MAPC-A2001
MAPC-A2001-ADTR1
Amplifier,T&R,3.4-4GHz,GaN-SiC,DFN 7x6.5

Compatible Parts