MAPC-A2025

GaN Amplifier 32 V, 8 W

The MAPC-A2025 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for applications 1W average power and optimized for 3.3 - 4.2 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 8 W (39 dBm) in an 4 mm surface mount QFN package.

Product Specifications

Part Number
MAPC-A2025
Description
GaN Amplifier 32 V, 8 W
Min Frequency(MHz)
3300
Max Frequency(MHz)
4200
Supply Voltage(V)
32
PSAT Watt(W)
8.0
Package
4mm
Package Category
QFN

Features

  • MACOM PURE CARBIDEā„¢ Amplifier Series
  • Optimized for 3.3 - 4.2 GHz Applications
  • High Terminal Impedances for Broadband Performance
  • 26 - 36 V Operation
  • Low Thermal Resistance
  • 100% RF Tested
  • RoHS* Compliant

Applications

  • 5G Cellular Networks
  • Tri-band Small Cells

Technical Resources

Datasheet


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