MAPC-A2506

GaN Amplifier 50 V, 30 W AVG 3.7 - 4.0 GHz

The MAPC-A2506 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for asymmetrical Doherty base station applications with 30W average power and optimized for 3.7 - 4.0 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 220 W (53.4 dBm) in an air cavity ceramic package.

Product Specifications

Part Number
MAPC-A2506
Short Description
GaN Amplifier 50 V, 30 W AVG 3.7 - 4.0 GHz
Min Frequency(MHz)
3700
Max Frequency(MHz)
4000
Supply Voltage(V)
50
PSAT(W)
220.0
Gain(dB)
12.5
Efficiency
52.3
Test Freq(GHz)
3.85
Package
AC-780S-4
Package Category
Ceramic

Features

  • MACOM PURE CARBIDEĀ® Amplifier Series
  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Asymmetrical Doherty Application
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Applications

  • Cellular Base Station Applications

Order from MACOM

MAPC-A2506-AS000
Amplifier,220W,3.7-4.0GHz,AC-780SP-4
MAPC-A2506-ASSB1
Sample Board, MAPC-A2506
MAPC-A2506-ASTR1
Amplifier,T&R,220W,3.7-4.0GHz,AC-780SP-4