MAPC-A2517

GaN Amplifier 50 V, 30 W AVG 3.3 - 3.8 GHz

The MAPC-A2517 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for asymmetrical Doherty base station applications with 30W average power and optimized for 3.3 - 3.8 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 250 W (54.0 dBm) in an air cavity ceramic package.

Product Specifications

Part Number
MAPC-A2517
Description
GaN Amplifier 50 V, 30 W AVG 3.3 - 3.8 GHz
Min Frequency(MHz)
3300
Max Frequency(MHz)
3800
Gain(dB)
15.0
Package
air cavity ceramic package
PSAT(dBm)
52

Features

  • MACOM PURE CARBIDEā„¢ Amplifier Series
  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Asymmetrical Doherty Application
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Applications

  • Aerospace and Defense
  • Defense Communications
  • ISM
  • VHF/UHF/L-Band Radar
  • Wireless Infrastructure

Technical Resources

Datasheet


Order from MACOM

MAPC-A2517-AS000
Amplifier, 3.3-3.8GHz, 220W, GaN-SiC
MAPC-A2517-ASSB1
Sample Board, MAPC-A2517-AS000
MAPC-A2517-ASTR1
Amplifier,3.3-3.8GHz,220W,GaN-SiC,T&R