MAPC-A2517
GaN Amplifier 50 V, 30 W AVG 3.3 - 3.8 GHz
The MAPC-A2517 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for asymmetrical Doherty base station applications with 30W average power and optimized for 3.3 - 3.8 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 250 W (54.0 dBm) in an air cavity ceramic package.
Product Specifications
- Part Number
- MAPC-A2517
- Description
- GaN Amplifier 50 V, 30 W AVG 3.3 - 3.8 GHz
- Min Frequency(MHz)
- 3300
- Max Frequency(MHz)
- 3800
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 30.0
- Gain(dB)
- 15.8
- Efficiency
- 47.9
- Test Freq(GHz)
- 3.60
- Package
- AC-780S-4
- PSAT(dBm)
- 52
- Package Category
- air cavity ceramic package
Features
- MACOM PURE CARBIDE™ Amplifier Series
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Asymmetrical Doherty Application
- High Terminal Impedances for Broadband Performance
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant
Applications
- Asymmetrical Doherty Application