MAPC-A2520

GaN Amplifier 50 V, 30 W AVG

The MAPC-A2520 is a high power GaN-on-Silicon Carbide HEMT D-mode amplifier suitable for asymmetrical Doherty base station applications with 30 W average power and optimized for 3.8 - 4.2 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 250 W (54 dBm) in an air cavity ceramic package.

Product Specifications

Part Number
MAPC-A2520
Description
GaN Amplifier 50 V, 30 W AVG
Min Frequency(MHz)
3800
Max Frequency(MHz)
4200
Supply Voltage(V)
50
PSAT Watt(W)
30.0
Gain(dB)
14.2
Package
air cavity ceramic package

Features

  • MACOM PURE CARBIDEĀ® Amplifier Series
  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Asymmetrical Doherty Application
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Applications

  • Asymmetrical Doherty Application

Technical Resources

Datasheet


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