MAPC-A3002-AP
GaN on SiC Transistor, 25 W, 28 V DC - 3 GHz
The MAPC-A3002-AP GaN HEMT is a power transistor optimized for DC - 3 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 25 W. This transistor is assembled in an industry standard surface mount plastic package.
Product Specifications
- Part Number
- MAPC-A3002-AP
- Description
- GaN on SiC Transistor, 25 W, 28 V DC - 3 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 3000
- Gain(dB)
- 16.5
- Package
- Surface Mount
- Package Category
- SOIC-8EP Plastic
- Rohs
- Yes
- Product Logo
- MACOM_PURECARBIDE_Blue_R.jpg
Features
- Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz
- 27.5 W P3dB Peak Envelope Power (PEP)
- Drain Efficiency: 65%
- Small Signal Gain: 16.5 dB
- 100% RF tested
- Thermally - Enhanced SOIC-8 Plastic Package
- RoHS* Compliant
Applications
- Defense Communications
- land mobile radio
- Avionics
- Wireless Infrastructure
- ISM
- VHF/UHF/L/S-Band Radar