MAPC-A3005-AD
GaN on SiC Transistor, 8 W, 28 V DC - 6 GHz
The MAPC-A3005-ASThe MAPC-A3005-AD is a 8 W packaged, unmatched transistor utilizing a high performance, GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3005-AD provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems. is a 10 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN-on-SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3005-AS provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- MAPC-A3005-AD
- Description
- GaN on SiC Transistor, 8 W, 28 V DC - 6 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 8.0
- Gain(dB)
- 19.0
- Efficiency
- 69
- Test Freq(GHz)
- 2.00
- Package
- air cavity ceramic package
- PSAT(dBm)
- 39
Features
- Saturated Power: 8 W
- Drain Efficiency: 69 %
- Small Signal Gain: 19 dB
- DFN 3 x 4, 12 L Plastic Package
- RoHS* Compliant
Applications
- Avionics: Mode-S, TCAS, JTIDS, DME and TACAN.
- Military Radio
- S-Band RADAR
- L-Band RADAR
- Electronic Warfare
- ISM
- General Amplification