MAPC-A3014
GaN on SiC Transistor, 40 W, 50 V DC - 8 GHz
GaN on SiC Transistor, 40 W, 50 V DC - 8 GHz The MAPC-A3014 is a 40 W packaged, unmatched transistor utilizing a high performance, GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3014 provides superior performance under CW operation allowing customers to improve SWaPC benchmarks in their next generation systems
Product Specifications
- Part Number
- MAPC-A3014
- Description
- GaN on SiC Transistor, 40 W, 50 V DC - 8 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 8000
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 40.0
- Gain(dB)
- 26.0
- Efficiency
- 76
Features
- Saturated Power: 40 W
- Drain Efficiency: 76%
- Small Signal Gain: 26 dB
- 3 x 4 mm 12 Lead DFN Plastic Package
- RoHS* Compliant
Applications
- Avionics - TACAN, DME, IFF
- Military Radio
- L-Band, S-Band, C-Band Radar
- Electronic Warfare
- ISM
- General Amplification