MAPC-C18641-DP
High Power RF GaN Amplifier 640 W, 48 V, 1805 - 1880 MHz
The MAPC-C18641-DP is a GaN on Silicon Carbide HEMT Amplifier designed for asymmetrical Doherty applications. The device is optimized for the frequency band of 1805 to 1880 MHz. Product is housed in an over-molded TO-package.
Product Specifications
- Part Number
- MAPC-C18641-DP
- Description
- High Power RF GaN Amplifier 640 W, 48 V, 1805 - 1880 MHz
- Min Frequency(MHz)
- 1805
- Max Frequency(MHz)
- 1880
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 640.0
- Gain(dB)
- 18.0
- Efficiency
- 57
Features
- GaN on SiC HEMT Technology
- Designed for Asymmetrical Doherty Application
- 49.3 dBm Average Output Power
- 640 W Peak Output Power
- Input and Output Pre-matched Device
- Low Thermal Resistance
- 100% DC and RF Tested
- RoHS* Compliant
Applications
- Infrastructure