MAPC-C22641-DP
High Power RF GaN Amplifier 640 W, 50 V, 2110 - 2200 MHz
The MAPC-C22641-DP is a GaN on Silicon Carbide HEMT Amplifier designed for asymmetrical Doherty applications. The device is optimized for the frequency band of 2110 to 2200 MHz. This product is housed in an over-molded TO-package.
Product Specifications
- Part Number
- MAPC-C22641-DP
- Description
- High Power RF GaN Amplifier 640 W, 50 V, 2110 - 2200 MHz
- Min Frequency(MHz)
- 2110
- Max Frequency(MHz)
- 2200
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 640.0
- Gain(dB)
- 17.1
- Efficiency
- 57.1
Features
- GaN on SiC HEMT Technology
- Designed for Asymmetrical Doherty Application
- Average Output Power: 49.3 dBm
- Peak Output Power: 640 W
- Input and Output Pre-matched Device
- Low Thermal Resistance
- 100% DC and RF Tested
- RoHS* Compliant
Applications
- Infrastructure