MAPC-C24600-CP
High Power RF GaN Amplifier, 600 W, 48 V, 2300 - 2400 MHz
The MAPC-C24600-CP is a GaN on Silicon Carbide HEMT Amplifier designed for asymmetrical Doherty applications. The device is optimized for the frequency band of 2300 to 2400 MHz. Product is housed in an over-molded TO-package.
Product Specifications
- Part Number
- MAPC-C24600-CP
- Description
- High Power RF GaN Amplifier, 600 W, 48 V, 2300 - 2400 MHz
- Min Frequency(MHz)
- 2300
- Max Frequency(MHz)
- 2400
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 600.0
- Gain(dB)
- 17.0
- Efficiency
- 55.7
- Package
- TO288-8L
Features
- GaN on SiC HEMT Technology
- Designed for Asymmetrical Doherty Application
- 49.5 dBm Average Output Power
- 600 W Peak Output Power
- Input and Output Pre-matched Device
- Low Thermal Resistance
- 100% DC and RF Tested
- RoHS* Compliant
Applications
- Point-to-Point / Infrastructure