MAPC-C27055-AD
High Power RF GaN Amplifier 55 W, 50 V, 2300 - 2700 MHz
The MAPC-C27055-AD is a GaN on Silicon Carbide HEMT Amplifier designed for symmetrical Doherty applications. The device is optimized for the frequency band of 2300 to 2700 MHz. Product is housed in an over-molded DFN package.
Product Specifications
- Part Number
- MAPC-C27055-AD
- Description
- High Power RF GaN Amplifier 55 W, 50 V, 2300 - 2700 MHz
- Min Frequency(MHz)
- 2300
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 55.0
- Gain(dB)
- 15.0
- Efficiency
- 26.2
Features
- GaN on SiC HEMT Technology
- Designed for Symmetrical Doherty Application
- 33.5 dBm Average Output Power
- 55 W Peak Output Power
- Input and Output Pre-matched Device
- Low Thermal Resistance
- 100% DC and RF Tested
- RoHS* Compliant
Applications
- nfrastructure