MAPC-C38007-AD
RF GaN Transistor 7 W, 48 V, 5000 MHz
The MAPC-C38007-AD is a GaN on Silicon Carbide HEMT designed for base station applications. The circuit is optimized for modulated signal operation within the 3400 - 3800 MHz frequency band. This product is housed in a 4.0 x 4.5 mm DFN package.
Product Specifications
- Part Number
- MAPC-C38007-AD
- Description
- RF GaN Transistor 7 W, 48 V, 5000 MHz
- Min Frequency(MHz)
- 3400
- Max Frequency(MHz)
- 3800
- Gain(dB)
- 18.2
- Bias Current(mA)
- 16
- Package
- 4.0 x 4.5 mm
- Package Category
- DFN
- Rohs
- Yes
Features
- GaN on SiC HEMT Technology
- Designed for Digital Predistortion Error Correction Systems
- 7W Peak Output Power
- High Terminal Impedances for Broadband Performance
- 100% DC and RF Tested
- RoHS* Compliant
Applications
- Point-to-Point / Infrastructure