MAPC-C38060-AM
RF GaN Amplifier Module 60 W, 48 V, 3400 - 3800 MHz
The MAPC-C38060-AM is a fully integrated 2-stage GaN on Silicon Carbide HEMT Amplifier module using all GaN technology. The device is optimized for the frequency band of 3400 to 3800 MHz. The product features an over-molded thermally enhanced LGA package.
Product Specifications
- Part Number
- MAPC-C38060-AM
- Description
- RF GaN Amplifier Module 60 W, 48 V, 3400 - 3800 MHz
- Min Frequency(MHz)
- 3400
- Max Frequency(MHz)
- 3800
- Supply Voltage(V)
- 48
- Gain(dB)
- 32.5
- Efficiency
- 45
- PSAT(dBm)
- 40
Features
- GaN on SiC HEMT Technology
- 2-Stage Asymmetrical Doherty Amplifier
- Average Output Power: 39.5 dBm
- Peak Output Power: 60 W
- Input and Output: 50 Ω
- RF Input DC Blocked
- Integrated Power Management Bias Controller
- 100% DC and RF Tested
- RoHS* Compliant
Applications
- Point-to-Point / Infrastructure