MAPC-C38550-CP
High Power RF GaN Amplifier 400 W, 48 V, 3400 - 3800 MHz
The MAPC-C38550-CP is a GaN on Silicon Carbide HEMT Amplifier designed for asymmetrical Doherty applications. The device is optimized for the frequency band of 3400 - 3800 MHz. Product is housed in an over-molded TO-package.
Product Specifications
- Part Number
- MAPC-C38550-CP
- Description
- High Power RF GaN Amplifier 400 W, 48 V, 3400 - 3800 MHz
- Min Frequency(MHz)
- 3400
- Max Frequency(MHz)
- 3800
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 400.0
- Efficiency
- 36
- Package
- TO248-8L
- PSAT(dBm)
- 48
Features
- GaN on SiC HEMT Technology
- Designed for Asymmetrical Doherty Application
- 47.5 dBm Average Output Power
- 400 W Peak Output Power
- Input and Output Pre-matched Device
- Low Thermal Resistance
- 100% DC and RF Tested
- RoHS* Compliant
Applications
- Point-to-Point / Infrastructure