MAPRST0912-50
Bipolar
The MAPRST0912-50 is a RF power transistor. These high power transistors are ideal for avionics, communications, radar, and industrial, scientific, and medical applications.
Product Specifications
- Part Number
- MAPRST0912-50
- Description
- Bipolar
- Min Frequency(MHz)
- 960
- Max Frequency(MHz)
- 1215
- Bias Voltage(V)
- 50.0
- Pout(W)
- 50.00
- Gain(dB)
- 9.10
- Efficiency(%)
- 40
- Type
- Bipolar
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- NPN Silicon Microwave Power Transistors
- Gold Metallization System
- Diffused Emitter Ballasting Resistor
- High Efficiency Inter-Digitized Geometry
- Broadband Class C Operation
- Common Base Configuration
- RoHS Compliant
- Hermetic Metal/Ceramic Package
- Internal Input and Out Impedance Matching
Applications
- Aerospace and Defense
- ISM
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)