MARP-BA56
Backside Avalanche Photodiode 56 GBaud
The MARP-BA56 is a backside-illuminated avalanche photodiode (APD) chip. This chip is usable from 1250 to 1650 nm, and capable of very high sensitivity when coupled to a low noise amplifier for transmission applications up to 56 Gb/s NRZ and 112 Gb/s PAM4 modulation.This APD utilizes a proprietary design for high quantum efficiency and excellent reliability that meets Telcordia GR-468 reliability standards for hermetic products and is RoHS* compliant. This product is best suited for use in hermetic assemblies. Both bare die for flip-chip applications and chip-on-carrier (CoC) configurations are available.
Product Specifications
- Part Number
- MARP-BA56
- Description
- Backside Avalanche Photodiode 56 GBaud
- Bandwidth(GHz)
- 30.00
- Responsivity(A/W)
- 4.20
- Capacitance(fF)
- 30.000
- Sensitivity
- -16
- Package Type
- Die
Features
- Avalanche Photodiode Chip
- High Data Rate, 56 Gb/s NRZ & 112 Gb/s PAM4
- High Sensitivity, -16 dBm
- 250 - 1650 nm Wavelength Range
Applications
- 100G Ethernet
- 200-Gigabit Ethernet (200GbE)
- 400-Gigabit Ethernet (400GbE)
- 50G PON