MASW-002102-13580

HMIC™ Si PIN Diode with Bias

The MASW-002102-13580 and MASW-003102-13590 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy.

Product Specifications

Part Number
MASW-002102-13580
Short Description
HMIC Si PIN Diode with Bias
Min Frequency(MHz)
2
Max Frequency(MHz)
18000
Isolation(dB)
55
Insertion Loss (dB)
1.800
IIP3(dBm)
40
CW Incident Power(W)
2.0
Compatible Parts
MADR-007097-000100
Compatible Parts
MADR-007097-000100
Package Category
Die/Bumped Die
Package
DIE
ROHS
Yes

Order from MACOM

MASW-002102-13580G
Diode,HMIC Switch w/Bias network
MASW-002102-13580G Distributors
MASW-002102-13580W
2T,Switch W/BiasNet
MASW-002102-13580W Distributors