Product Detail

MASW-002102-13580
HMIC™ Si PIN Diode with Bias
The MASW-002102-13580 and MASW-003102-13590 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy.
Features
  • Broad Bandwidth Specified up to 18 GHz
  • Up to 33 dBm CW Power Handling @ +25°C
  • Glass Encapsulate Construction
  • Fully Monolithic
  • Rugged
  • Low Insertion Loss / High Isolation
  • Integrated Bias Network
  • Usable up to 26 GHz
  • 260°C Reflow Compatible
  • RoHS* Compliant
Applications
  • Aerospace and Defense
  • ISM
Specifications
  • Min Frequency: 2 MHz
  • Max Frequency: 18,000 MHz
  • Insertion Loss : 1.8 dB
  • Isolation: 55 dB
  • IIP3: 40 dBm
  • CW Incident Power: 2 W
Package
  • DIE
Package Category
  • Die/Bumped Die
ROHS
  • Yes
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MASW-002102-13580G
Diode, HMIC Switch w/Bias network
DIE
In Stock: 100
Buy
In Stock: 125
Buy
In Stock: 175
Buy
Buy
MASW-002102-13580W
2T, Switch W/BiasNet
"DIE, WAFFLE PACK"
In Stock: 275
Buy

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